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Spansion(tm) Flash Memory Takes Technology Leadership with Sampli ng of World's First 512 Megabit

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SUNNYVALE, CA-Sept. 10, 2003 - The world's first 512 Megabit NOR Flash memory device, the Spansion(tm) S29GL512N product, was announced today by FASL LLC, a joint venture of AMD (NYSE: AMD) and Fujitsu (TSE: 6702). The S29GL512N is the first Spansion product using 130/110-nanometer, second-generation MirrorBit(tm) process technology. This highest density, single die product can support a wide range of solutions for the embedded and wireless markets. Engineering samples of the S29GL512N are available now.
"Less than two months ago, we launched the Spansion memory brand as a new leader in Flash memory," said Dr. Bertrand Cambou, President and CEO of FASL LLC. "Today's introduction of the world's highest density NOR Flash memory device using 130-nanometer 2-bit per cell MirrorBit technology affirms the leadership of Spansion Flash memory technology and innovation."
"The Spansion S29GL512N product has been designed to overcome our customers' most important technical and commercial challenges," said Ian Williams, FASL LLC Vice President of Worldwide Customer Operations. "We are enabling industry-changing breakthroughs--in wireless handheld devices and automotive electronics, among others--for customers using Spansion Flash memory solutions based on our 130/110-nanometer MirrorBit technology. We're committed to enabling customer competitiveness and differentiation."

Device Benefits and Features
Competitive Cost Structure
Spansion Flash memory using MirrorBit technology significantly reduces memory die size as well as the number of wafer fabrication steps. As a result of improved fab throughput, Spansion Flash memory solutions using MirrorBit technology deliver a one-generation cost-structure advantage over multi-level cell (MLC) architecture at any given technology node. Specifically, Spansion Flash memory solutions at the 130/110nm process node achieve cost structures equivalent to or better than projected 90nm MLC solutions or projected 65nm single bit Floating Gate Flash technology.

Advantages of NOR vs. NAND Flash Memory
The Spansion S29GL512N device enables designers to create large, cost-effective memory arrays without the drawbacks associated with alternative solutions at this density. Unlike competing memory solutions based on NAND architecture, the Spansion Flash memory S29GL512N provides a familiar, easy-to-use memory-mapped interface that helps simplify system design and reduce time-to-market. The conventional customer-friendly interface eliminates additional interface design, new software algorithm development and the requirement for additional error detection circuitry (required to address potential bit failures in NAND technology).

Advanced Sector Protection
Today's electronic products--from cellular handsets and set-top cable converters, to automotive electronics and kitchen appliances--are becoming increasingly "connected" and "networked. The Spansion S29GL512N includes multiple levels of sector protection and security, collectively known as Advanced Sector Protection (ASP), to address the increasing need for network security. The ASP suite of solutions enables designers to create a "virtual fortress" against unauthorized access such as cloning, hacking, and signal fraud in their systems.

Easy Migration Path
The Spansion 512 Megabit solution is the first device in a new family of 512, 256, and 128 Megabit Flash memory devices. The 512 Megabit is initially available using 130nm second-generation MirrorBit technology with the plan to migrate to a 110nm shrink of this process. The 256 and 128 Megabit will be designed using the 110nm process shrink. This new family of devices expands the range of product offerings and reduces cost from the first-generation, high-density MirrorBit technology solutions, to give complete 16 to 512 Megabit pin compatibility. With these products, Spansion Flash memory solutions provide a comprehensive cost reduction and density migration path for designers and manufacturers.

Product Availability
Engineering samples of the S29GL512N are available now. The S29GL256N (256 Mb) and S29GL128N (128 Mb) are planned to begin sampling in mid-2004. Spansion Flash memory devices, including the S29GL512N, are available from AMD (NYSE: AMD) and Fujitsu (TSE: 6702).

Product Support Tools
* JTAG programmer support from Goepal, JTAG Technologies and Asset Intertech immediately, with additional vendor support expected during late 2004
* BP Microsystems and Data IO programmer support planned for fourth quarter
* Spansion software solutions include Low Level Drivers (LLDs) and Enhanced Flash Drivers (EFDs) with native support for VxWorks, QNX, Linux and WinCE (and derivatives) planned for first quarter 2004
* VHDL/Verilog, IBIS and Denali CAD models available in September

Pricing
The S29GL512N device is priced at $27.50 each in quantities of 10,000.

About Spansion Flash Memory Devices
Spansion Flash memory products encompass a broad spectrum of densities and features to support a wide range of markets. Spansion Flash memory customers represent leaders in the wireless, cellular, automotive, networking, telecommunications and consumer electronics markets.
There are a variety of Spansion Flash memory products, such as devices based on the innovative MirrorBit(tm) technology; the award-winning simultaneous read-write (SRW) product family; super low-voltage 1.8 Volt Flash memory devices; and burst- and page-mode devices. Information about Spansion Flash memory solutions is available at http://www.spansion.com/overview.
The Spansion global product brand name is marketed by FASL LLC, a joint venture formed by the integration of AMD's and Fujitsu's Flash memory businesses. The new joint venture is the largest Flash memory company in the world based on dedicated resources that include gross assets having a net book value of approximately US$3 billion and approximately 7,000 employees. Spansion Flash memory solutions are available worldwide from AMD and Fujitsu.