Press release
MILPITAS, Calif. - T-RAM Semiconductor Inc. (T-RAM) and GLOBALFOUNDRIES announced today that they have entered into a joint development agreement targeted toward the application of T-RAM's Thyristor-RAM embedded memory to advanced technology nodes.
According to Gregg Bartlett, Senior Vice President of Technology and R&D at GLOBALFOUNDRIES, "We are pleased to be jointly developing T-RAM memory for 32nm and 22nm technologies. T-RAM's embedded memory technology shows a great deal of potential for use in low-power, high-performance dense cache applications for advanced technology nodes."
Sam Nakib, President and CEO of T-RAM, added, "We are excited about working with GLOBALFOUNDRIES on the next generation embedded memory technology. T-RAM has successfully completed extensive development of the Thyristor-RAM technology and has delivered a fully manufacturable and robust memory solution with proven yield, reliability, and low-cost of integration in earlier technology nodes.
"We believe that GLOBALFOUNDRIES and their customers' products provide a great opportunity to further develop and show-case T-RAM's significant performance and economic advantages. T-RAM's revolutionary Thyristor-RAM memory technology provides the highest combination of density and performance among all embedded memory technology candidates, and avoids the fundamental scalability challenges that face 6T-SRAM and other FET-based memory cells."
