Under the name IM Flash Technologies, the two companies have also started mass production of 64GB NAND devices, created using the same process.
Offering twice the performance and capacity of the 64GB NAND, the 128GB device can store 1 terabit of data in a single tiny package with just eight die and can achieve speeds of 333 megatransfers (MT/s) per second
In a press release, Intel and Micron explained how they managed to create the flash devices using the 20nm process:
“The key to their success with 20nm process technology is due to an innovative new cell structure that enables more aggressive cell scaling than conventional architectures. Their 20nm NAND uses a planar cell structure — the first in the industry — to overcome the inherent difficulties that accompany advanced process technology, enabling performance and reliability on par with the previous generation. The planar cell structure successfully breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.”
The demand for high-capacity NAND flash devices is expected to grow over the coming years as demand for digital content and more effective storage in mobile devices increases. The two companies expect the two tiny products to be used in smartphones, tablets, solid state drives (SSDs), and other high-performance devices.
Intel and Micron plan to ramp up production of the 64GB flash product over the Christmas period and then make samples of the 128GB device available in January, followed by mass production in the first half of the year.
