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How low can you go? Samsung producing 10nm flash memory

by Alistair Lowe on 15 November 2012, 10:45

Tags: Samsung (005935.KS)

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It was August when we announced that Samsung had achieved mass-production of 20nm flash that offered a significant performance rise to 1,500 and 3,500 IOPS read and write respectively, utilising the new eMMC 4.5 interface, allowing for simplified access at up to 200MB/s.

Though perhaps not holding the same significance to the future at Everspin's ST-MRAM, rather impressively, the firm has already begun mass-production of new 10nm modules, offering an improved 2,000 and 5,000 IOPS of read and write performance with speeds of 260 and 50 MB per second respectively, exceeding the specifications laid down by JEDEC's eMMC 4.5.

Samsung flash

The flash modules come in 64Gb (8GB) sizes and have been dubbed the eMMC Pro Class 2000 (representing the read IOPS capability). It's Samsung's hope that this greater level of performance will see JEDEC create a new eMMC standard for the chips sometime next year.

Being compatible with the firm's previous 20nm process, Samsung has been able to deploy the new flash with productivity savings of 30 per cent whilst the chips themselves offer 30 per cent greater performance over their 20nm predecessors, with a 20 per cent smaller footprint.

Expect to find these units in high-end devices before the year's end.



HEXUS Forums :: 2 Comments

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Any word on write durability? I imagine it could start to be a problem at 10nm, especially if they're using TLC.
and how many write cycles do you get on 10nm? AFAIK 20nm gave you about 1500, while 25nm was about 3000 and 35nm 5000.

Even at 20nm, if you had a 60GB drive and were writing 7GB a day to it, it would only last 1.5 years. Which clearly isnt enough. I dread to think what it would be at 10nm.